男人边吃奶边弄进去视频_性欧美videoesxxoo在线_中国黄色网页_hd年轻善良的锼子6电影

CN EN
Home
About Us
Newpros
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application Back
 PDF

Introduction 1、TO-247package 50A 650V IGBT discrete；
2、The voltage level is 650V, the current level is 50A@Tc=100℃；
3、It is mainly used for PV/Eenergy Storage/ EV charger and other high-frequency applications；
4、Low conduction loss, low switching loss, high reliability；
5、Use environmentally friendly materials and meet RoHS standards；
Features 1、Tjmax=175℃;
2、Positive temperature coefficient ；
3、High voltage 650V；
4、Low conduction loss, low switching loss, meet the high frequency application conditions；
5、The latest generation of micro trench design, a cost-effective product；
SPECIFICATION

DGW50N65CTL0

Related new products

Optimization Design of Rectifier Bridge —— New Package GBU-L

GBU Package Extended 35A-50A High Current Series Products

SOD-123HE Diode

MOSFET for High Power DC-DC

1200V 40mΩ SiC MOSFET

NP – sealed MOSFET for cooling fan

IGBT Micro Trench Discrete for PV/Eenergy Storage/EV Charger Application

DFN1608 Package Small Signal Schottky Diode for Mobile Phone PCB

High junction temperature ultrafast recovery diode

SGT N80-85V Power MOSFET